GaN/AlGaN core-shell nanowires with varied Al compositions have been grown on GaN nanowire array utilizing selective space metallic natural chemical vapor deposition method. Development of AlGaN shell utilizing pure N₂ service fuel resulted in a easy floor for the nonpolar m-plane sidewalls with superior optical properties, whereas, progress utilizing a combined N₂/H₂ service fuel resulted in striated floor much like the generally noticed morphology within the progress of nonpolar III-nitrides. Al compositions within the AlGaN shells are discovered to be lower than the fuel part enter ratio. The systematic discount in effectivity of Al incorporation in AlGaN shells with rising Al molar circulate within the fuel part is attributed to geometric loss, strain-limited Al incorporation, and elevated fuel part parasitic response. Defect-related luminescence have been noticed for AlGaN shells with Al content material ≥ 30% and the origin of defect luminescence have been decided as (VIII-2O_N)^1- advanced. Microstructural evaluation of the AlGaN shells revealed that the dominant defects are partial dislocations. Development of nonpolar m-plane Al_xGa_1-xN/Al_yGa_1-yN quantum wells on the sidewalls of GaN nanowires produce arrays with wonderful morphology and optical emission, which demonstrated the viability of such a progress scheme for giant space environment friendly ultraviolet LEDs in addition to for the subsequent era ultraviolet micro-LEDs.